This project explores an innovative approach to single-photon emitting systems using optically active G-centres in ultrapure 28Si, which efficiently emit photons in the telecom O-band. The project pursues two different approaches to providing the centres. On the one hand, intrinsic G centres in ultrapure 28Si are spatially identified and connected by writing waveguides into the structure. This approach has the advantage of very high-quality single-photon emitters and the challenge that the centres are rare and stochastically distributed. On the other hand, defects are produced in a thin layer of ultrapure 28Si on a native silicon dioxide by irradiation with carbon and high-energy electrons. The sandwich layers are produced by standard flip-chip bonding or alternating oxidation-reduction steps in collaboration with the IKZ Berlin. The spatial positions of the emitters are, in both cases, precisely determined using a high-resolution setup, similar to the one already used for quantum dots. However, in addition to the case of QDs, the same setup is simultaneously used for laser-index writing of specially designed photonic structures into the silicon dioxide (glass) layer (see Figure).
The photonic structures are developed using advanced machine learning algorithms by the Zhuang RG. These scalable quantum-photonic circuits are fabricated with the objective of coupling potential emitters to each other and/or to external modes. In collaboration with Kues RG, this enables the export of entangled multiphoton pairs into fibre-based optics and facilitates the exploration of quantum-photonic properties within integrated photonic structures.
30167 Hannover
30167 Hannover
30167 Hannover
